000			01800pam a2200361 a 4500
001			4835841
005			20171002095112.0
008			900712s1990 nyua b 101 0 eng
010			_a 90044242
020			_a0306436620
040			_aDLC _cDLC _dDLC
050	0	0	_aQC 610.9 _b.N3644 1989
082	0	0	_a537.6/226 _220
111	2		_aNATO Advanced Study Institute on Electronic Properties of Multilayers and Low-Dimensional Semiconductor Structures _d(1989 : _cCastéra-Verduzan, France) _922253
245	1	0	_aElectronic properties of multilayers and low-dimensional semiconductor structures / _cedited by J.M. Chamberlain and L. Eaves and J.-C. Portal.
260			_aNew York : _bPlenum Press, _c1990
300			_axiii, 477 p. : _bill. ; _c26 cm.
490	1		_aNATO ASI series. Series B, Physics ; _vvol. 231
500			_aProceedings of a NATO Advanced Study Institute on Electronic Properties of Multilayers and Low-Dimensional Semiconductor Structures, held Sept. 11-22, 1989, at Château de Bonas, Castéra-Verduzan, France.
500			_a"Published in cooperation with NATO Scientific Affairs Division."
504			_aIncludes bibliographical references and index.
650		0	_aSemiconductors _xCongresses. _921264
650		0	_aLayer structure (Solids) _xCongresses. _922254
650		0	_aTunneling (Physics) _xCongresses. _922255
650		0	_aSuperlattices as materials _xCongresses. _922256
700	1		_aChamberlain, J. M. _922257
700	1		_aEaves, L. _922258
700	1		_aPortal, J. C. _922259
830		0	_aNATO ASI series. _nSeries B, _pPhysics ; _vv. 231. _922260
906			_a7 _bcbc _corignew _d1 _eocip _f19 _gy-gencatlg
942			_2lcc _cBK
999			_c10441 _d10441