000 00927cam a22002297a 4500
001 15450251
005 20240820075054.0
008 080915s2008 si a b 001 0 eng d
020 _a978-981-256-864-9
020 _a981-256-864-6
050 0 0 _aTK 7871.95
_b.M58 2008
100 1 _aMiura-Mattausch, Mitiko
_946070
245 1 4 _aThe physics and modeling of MOSFETS:
_bsurface-potential model HiSIM /
_cMitiko Miura-Mattausch, Hans Jürgen Mattausch and Tatsuya Ezaki.
260 _aSingapore:
_bWorld Scientific,
_c2008
300 _axxii, 352 p. :
_bill. ;
_c24 cm.
440 0 _aInternational series on advances in solid state electronics and technology
_946071
504 _aIncludes bibliographical references and index.
650 0 _aMetal oxide semiconductor field-effect transistors
_xMathematical models.
_946072
700 1 _aMattausch, Hans Jürgen.
_946073
700 1 _aEzaki, Tatsuya.
_946074
942 _2lcc
_cBK
999 _c20162
_d20162