000 | 00927cam a22002297a 4500 | ||
---|---|---|---|
001 | 15450251 | ||
005 | 20240820075054.0 | ||
008 | 080915s2008 si a b 001 0 eng d | ||
020 | _a978-981-256-864-9 | ||
020 | _a981-256-864-6 | ||
050 | 0 | 0 |
_aTK 7871.95 _b.M58 2008 |
100 | 1 |
_aMiura-Mattausch, Mitiko _946070 |
|
245 | 1 | 4 |
_aThe physics and modeling of MOSFETS: _bsurface-potential model HiSIM / _cMitiko Miura-Mattausch, Hans Jürgen Mattausch and Tatsuya Ezaki. |
260 |
_aSingapore: _bWorld Scientific, _c2008 |
||
300 |
_axxii, 352 p. : _bill. ; _c24 cm. |
||
440 | 0 |
_aInternational series on advances in solid state electronics and technology _946071 |
|
504 | _aIncludes bibliographical references and index. | ||
650 | 0 |
_aMetal oxide semiconductor field-effect transistors _xMathematical models. _946072 |
|
700 | 1 |
_aMattausch, Hans Jürgen. _946073 |
|
700 | 1 |
_aEzaki, Tatsuya. _946074 |
|
942 |
_2lcc _cBK |
||
999 |
_c20162 _d20162 |